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FDMS8674 N-Channel PowerTrench(R) MOSFET
November 2007
FDMS8674
N-Channel PowerTrench MOSFET
30V, 21A, 5.0m
Features
Max rDS(on) = 5.0m at VGS = 10V, ID = 17A Max rDS(on) = 8.0m at VGS = 4.5V, ID = 14A Advanced Package and Silicon combination for low rDS(on) and high efficiency MSL1 robust package design RoHS Compliant
(R)
tm
General Description
The FDMS8674 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.
Applications
Computing VR & IMVP Vcore Secondary Side Synchronous Buck POL DC-DC Converter Oring FET / Load Switch
Pin 1 S S D S G D D D D D Power 56 (Bottom View) D 5 6 7 8 4 G
3S 2S 1S
D
MOSFET Maximum Ratings TA = 25C unless otherwise noted
Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25C TA = 25C (Note 1a) (Note 3) TC = 25C TC = 25C TA = 25C (Note 1a) Ratings 30 20 21 94 17 150 181 78 2.5 -55 to +150 mJ W C A Units V V
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 1.6 50 C/W
Package Marking and Ordering Information
Device Marking FDMS8674 Device FDMS8674 Package Power 56 Reel Size 13'' Tape Width 12mm Quantity 3000units
(c)2007 Fairchild Semiconductor Corporation FDMS8674 Rev.B
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FDMS8674 N-Channel PowerTrench(R) MOSFET
Electrical Characteristics TJ = 25C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V ID = 250A, referenced to 25C VDS = 24V, VGS = 0V VGS = 20V, VDS = 0V 30 25 1 100 V mV/C A nA
On Characteristics
VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A ID = 250A, referenced to 25C VGS = 10V, ID = 17A VGS = 4.5V, ID = 14A VGS = 10V, ID = 17A, TJ = 125C VDD = 10V, ID = 17A 1.0 1.8 -6 4.1 5.8 5.8 87 5.0 8.0 8.3 S m 3.0 V mV/C
Dynamic Characteristics
Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 15V, VGS = 0V, f = 1MHz f = 1MHz 1745 860 130 0.9 2320 1145 195 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain "Miller" Charge VGS = 0V to 10V VGS = 0V to 5V VDD = 15V, ID = 17A VDD = 15V, ID = 17A, VGS = 10V, RGEN = 6 11 4 26 3 26 14 4.8 3.5 20 10 42 10 37 20 ns ns ns ns nC nC nC nC
Drain-Source Diode Characteristics
VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 2.1A VGS = 0V, IS = 17A IF = 17A, di/dt = 100A/s (Note 2) 0.7 0.8 40 30 1.2 1.2 64 48 V V ns nC
NOTES: 1. RJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design. a. 50C/W when mounted on a 1 in2 pad of 2 oz copper. b. 125C/W when mounted on a minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. 3. Starting TJ = 25C, L = 3mH, IAS = 11A, VDD = 30V, VGS = 10V.
(c)2007 Fairchild Semiconductor Corporation FDMS8674 Rev.B
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FDMS8674 N-Channel PowerTrench(R) MOSFET
Typical Characteristics TJ = 25C unless otherwise noted
150
VGS = 10V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
3.0
VGS = 3.5V
120
ID, DRAIN CURRENT (A) VGS = 5V
VGS = 4V VGS = 4.5V
2.5 2.0
VGS = 4V VGS = 4.5V
90 60 30 0 0
VGS = 5V
VGS = 3.5V
1.5
VGS = 10V
1.0
PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX
PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX
0.5 0 30 60 90 120 150
ID, DRAIN CURRENT(A)
1
2
3
4
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage
14
SOURCE ON-RESISTANCE (m)
1.8
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
1.6 1.4 1.2 1.0 0.8 0.6 -75
ID = 17A VGS = 10V
ID = 17A
12 10 8
PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX
rDS(on), DRAIN TO
TJ = 125oC
6 4
TJ = 25oC
2 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC)
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On- Resistance vs Junction Temperature
150
IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX
Figure 4. On-Resistance vs Gate to Source Voltage
200 100
VGS = 0V
120
ID, DRAIN CURRENT (A)
VDS = 5V
10 1 0.1
TJ = 150oC TJ = 25oC
90 60
TJ = 150oC
TJ = -55oC
30
TJ = 25oC TJ = -55oC
0.01
0
1
2
3
4
5
0.001 0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage vs Source Current
(c)2007 Fairchild Semiconductor Corporation FDMS8674 Rev.B
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FDMS8674 N-Channel PowerTrench(R) MOSFET
Typical Characteristics TJ = 25C unless otherwise noted
10
VGS, GATE TO SOURCE VOLTAGE(V) ID = 17A
3000
Ciss
8 6
VDD = 15V VDD = 20V
CAPACITANCE (pF)
VDD = 10V
1000
Coss
4 2 0 0 4 8 12 16 20 24 28
Qg, GATE CHARGE(nC)
Crss
100
50 0.1
f = 1MHz VGS = 0V
1
10
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage
100
ID, DRAIN CURRENT (A)
30
IAS, AVALANCHE CURRENT(A)
80 60
VGS = 10V
10
TJ = 25oC TJ = 125oC
40
Limited by Package VGS = 4.5V
20
RJC = 1.6 C/W
o
1 0.01
0.1
1
10
100 300
0 25
50
75
100
o
125
150
tAV, TIME IN AVALANCHE(ms)
TC, CASE TEMPERATURE ( C)
Figure 9. Unclamped Inductive Switching Capability
300
P(PK), PEAK TRANSIENT POWER (W)
Figure 10. Maximum Continuous Drain Current vs Case Temperature
500
VGS = 10V
100s
SINGLE PULSE RJA = 125oC/W TA = 25oC
100
ID, DRAIN CURRENT (A)
100
10
THIS AREA IS LIMITED BY rDS(on)
1ms 10ms
1
100ms 1s 10s DC
10
0.1
SINGLE PULSE TJ = MAX RATED RJA = 125oC/W TA = 25oC
1 0.5 -3 10 10
-2
0.01 0.01
0.1
1
10
100
10
-1
10
0
10
1
10
2
10
3
VDS, DRAIN to SOURCE VOLTAGE (V)
t, PULSE WIDTH (s)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power Dissipation
(c)2007 Fairchild Semiconductor Corporation FDMS8674 Rev.B
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FDMS8674 N-Channel PowerTrench(R) MOSFET
Typical Characteristics TJ = 25C unless otherwise noted
2
1
NORMALIZED THERMAL IMPEDANCE, ZJA
DUTY CYCLE-DESCENDING ORDER
0.1
D = 0.5 0.2 0.1 0.05 0.02 0.01
PDM
0.01
SINGLE PULSE RJA = 125 C/W
o
t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA
0.001 -3 10
10
-2
10
-1
10
0
10
1
10
2
10
3
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
(c)2007 Fairchild Semiconductor Corporation FDMS8674 Rev.B
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FDMS8674 N-Channel PowerTrench(R) MOSFET
TRADEMARKS
The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R)
(R)
Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FPSTM FRFET(R) Global Power ResourceSM
Green FPSTM Green FPSTM e-SeriesTM GTOTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R)
(R)
PDP-SPMTM Power220(R)
Power247(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6
SuperSOTTM-8 SyncFETTM The Power Franchise(R)
TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) UniFETTM VCXTM
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition
This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.
tm
Rev. I31
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only.
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2007 Fairchild Semiconductor Corporation FDMS8674 Rev.B
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